IGBTs were first introduced as a combination of the bipolar junction transistor (BJT) and the metal oxide semiconductor field effect transistor (MOSFET) technology. The IGBT is to prefer in medium high voltage segments (600- 3000V) rather than theMOSFET because it proved to have several good features like ruggedness and operation at higher frequencies [1, ch. 1.9]. The construction of the IGBT combines the low conduction losses of a BJT with the advantage of the short switching times of the MOSFET.

datasheet_5.pdf

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