vertical-cavity surface-emitting laser (semiconductor laser device, diode laser) Telecomunications, Pumping source Wave length : infrared to visible etched mesa VCSEL 980nm Buried tunnel junction(BTJ) VCSEL 1300nm,1550nm Material: ALGaAs(GaAs),InGaAsP(InP) Simulators are needed to explore the design parameter for an optimum solution—low cost and short time for a design cycle

Presentation1.ppt

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