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Description: 都在一个程序里，备份恢复 MBR,DBR,FAT，CMOS
把自己写的 备份恢复 MBR,DBR,FAT,CMOS 的程序合并成了一个程序（DOS），大家玩玩吧（有源码）。。。
还有 破解 CMOS密码的功能（不是毁了CMOS,而是毫发无伤的解密。。）
全部在自己的机子上经过测试，目前没有问题。
- All in a procedure, the backup restores MBR, DBR, FAT, CMOS
The backup writes which oneself restored MBR, DBR, FAT, the
CMOS procedure merges a procedure (DOS), everybody played (active
code). . . Had explains the CMOS password the function (has destroyed
CMOS, but was 姣?sends the non- wound the decipher. .) Completely on
own loom the process test, at present does not have the question.
Platform: |
Size: 17408 |
Author: 李大大 |
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Description: DBR简介,DBR区(DOS BOOT RECORD)即操作系统引导记录区的意思，通常占用分区的
第0 扇区共512 个字节(特殊情况也要占用其它保留扇区，我们先说第0 扇)。-DBR Profile, DBR District (DOS BOOT RECORD) operating system boot record that is the meaning of the district, usually occupied by partition 0 sector a total of 512 bytes (special circumstances should be occupied by other reservations sector, we have to say that the first 0 ).
Platform: |
Size: 8468480 |
Author: xu |
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Description: 自己编写的DBR透射率的对数和反射谱随波长的变化曲线-I have written the DBR transmittance and reflectance spectra of the logarithm curve with the wavelength
Platform: |
Size: 1024 |
Author: 胡都 |
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Description: 三周期的TiO2/teflon DBR 微腔透过率及反射光谱计算-Three cycles TiO2/teflon DBR microcavity transmittance and reflectance spectra
Platform: |
Size: 12288 |
Author: yaqi |
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Description: transmissivity of a microcavity resonator in a DBR stack，and emission pattern of different incident angles
Platform: |
Size: 2048 |
Author: liming |
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Description: reflectivity of dbr stack at different input angles
Platform: |
Size: 10240 |
Author: liming |
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Description: Copyed from a Phd paper：This program calculates the reflectivity of a DBR stack。
Platform: |
Size: 1024 |
Author: liming |
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Description: 计算垂直腔面发射激光器的DBR反射率，-the reflective of DBR
Platform: |
Size: 1024 |
Author: zhoukang |
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Description: A program for comuting the reflectivity of DBR.in semiconductor lasers.
Platform: |
Size: 1024 |
Author: Tower |
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Description: Matlab program for calculation of reflectivity of Distributed Bragg Reflector (DBR)
Platform: |
Size: 1024 |
Author: bapi |
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Description: 硬盘主引导扇区、分区表和分区引导扇区(MBR、DPT、DBR、BPB)详解-Hard disk master boot sector, partition table and partition boot sector (MBR, DPT, DBR, BPB) Detailed
Platform: |
Size: 1328128 |
Author: 李舒 |
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Description: 为自己的操作系统临时写的DBR及DBR的写入程序（参考了别人的程序）-For their operating system written by DBR, and DBR temporary write procedures (refer to someone else' s program)
Platform: |
Size: 8192 |
Author: sean hou |
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Description: 基于NTFS文件系统，利用MFT的信息修复DBR参数-NTFS-based file system, use DBR MFT parameters repair information
Platform: |
Size: 101376 |
Author: zak |
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Description: 简单计算DBR的matlab文件，计算激光器的分布反馈-the caculation of DBR in lase of ditributed feedback reflector
Platform: |
Size: 5120 |
Author: ymli |
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Description: 此程序主要使用matlab模拟了垂直激光器谐振腔的核心部件DBR的工作过程，得到其阈值振荡曲线-This program is mainly use matlab to simulate the working process of the core components of the vertical laser cavity DBR, its threshold oscillation curve
Platform: |
Size: 4096 |
Author: 曹静 |
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Description: 传递矩阵--- 基础函数--- DBR光谱响应理论计算-Transfer matrix- basic functions- calculations of DBR spectral response theory
Platform: |
Size: 1024 |
Author: 纳兰西韫 |
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Description: 基于NTFS文件系统，利用MFT的信息修复DBR参数-NTFS-based file system, use DBR MFT parameters repair information
Platform: |
Size: 101376 |
Author: fellpe |
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Description: This study is an attempt to investigate the
effect of distributed Bragg reflectors (DBRs) doping
concentration on the GaN-based vertical cavity surface
emitting lasers (VCSEL) using Integrated System
Engineering Technical Computer Aided Design (ISE
TCAD) software. Uniformly n (Up) and p (Down)
doping concentration, changed ranging 5e+17 to
1e+19 cm-3. The observation revealed that as DBR
doping concentrations rose, the output power increased
and the threshold current reduced. These are attributed
to the increase in radiative recombination and decrease
in the optical losses which has induced the
scattering process.-This study is an attempt to investigate the
effect of distributed Bragg reflectors (DBRs) doping
concentration on the GaN-based vertical cavity surface
emitting lasers (VCSEL) using Integrated System
Engineering Technical Computer Aided Design (ISE
TCAD) software. Uniformly n (Up) and p (Down)
doping concentration, changed ranging 5e+17 to
1e+19 cm-3. The observation revealed that as DBR
doping concentrations rose, the output power increased
and the threshold current reduced. These are attributed
to the increase in radiative recombination and decrease
in the optical losses which has induced the
scattering process.
Platform: |
Size: 569344 |
Author: wail |
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Description: DBR激光器计算程序，已经经过验证可以使用。非常值得参考的程序。DBR激光器程序(DBR laser calculation program, has been verified, you can use. Very worthy of reference procedures)
Platform: |
Size: 5120 |
Author: Robin1111
|
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Description: dbr code for matlab coding....!
Platform: |
Size: 4096 |
Author: ajab
|
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