Location:
Search - vcsel
Search list
Description: GPIB 控制Agilent 34401A
Platform: |
Size: 444088 |
Author: bill shuai |
Hits:
Description: 主要包括Dolph-Chebyshev Linear Array 和Taylor Line Source Method的原理和仿真-including Dolph- Chebyshev Linear Array and Taylo r Line Source Method Principle and Simulation
Platform: |
Size: 175104 |
Author: cathy |
Hits:
Description: GPIB 控制Agilent 34401A-GPIB control the Agilent 34401A
Platform: |
Size: 443392 |
Author: bill shuai |
Hits:
Description: VCSEL mirror design.
periodic boundary conditions to approximate a
periodic one-dimensional delta function potential with period 10 nm by considering eight
potential barriers with energy 20 eV and width 0.25 nm.
Platform: |
Size: 1024 |
Author: ali |
Hits:
Description: This communication presents an alysis of the design and fabrication of power-efficient, low
cost VCSEL-based optical transceiver proposed for emerging fiber data distributed interface
(FDDI) and fiber channel local-area network (FCLAN
to meet the increasing amount of information transmitted through communication networks.
VCSEL devices operating at low temperature display decrease jitter, increase output power
and enhance lifetime. Also, temperature gradient on large opto-electronic (OE) device arrays
generates performance non-uniformities and lowers the bit-error-rate (BER) of the optical
links. In addition, lowering the power consumption of optical transceivers contributes to the
overall reduction of the system power budget.-This communication presents an analysis of the design and fabrication of power-efficient, low
cost VCSEL-based optical transceiver proposed for emerging fiber data distributed interface
(FDDI) and fiber channel local-area network (FCLAN
to meet the increasing amount of information transmitted through communication networks.
VCSEL devices operating at low temperature display decrease jitter, increase output power
and enhance lifetime. Also, temperature gradient on large opto-electronic (OE) device arrays
generates performance non-uniformities and lowers the bit-error-rate (BER) of the optical
links. In addition, lowering the power consumption of optical transceivers contributes to the
overall reduction of the system power budget.
Platform: |
Size: 40960 |
Author: Eng.Sam |
Hits:
Description: part 1 about vcsel simulation of a paper I-part 1 about vcsel simulation of a paper IEEE
Platform: |
Size: 23552 |
Author: |
Hits:
Description: ode numerical simulation of vertical cavity semiconductor optical amplifier
Platform: |
Size: 1024 |
Author: |
Hits:
Description: these codes are about simulation of vcsel laser diod
Platform: |
Size: 8192 |
Author: minaa |
Hits:
Description: Matlab程序源代码，用于计算面发射激光器VCSEL的反射谱-caculation of the reflectivity of VCSEL
Platform: |
Size: 1024 |
Author: zhangld |
Hits:
Description: VCSEL fabrication oxide-confined layer
Platform: |
Size: 434176 |
Author: maxfares89 |
Hits:
Description: 角谱--信号通过VCSEL注入光纤时，因为需要透镜耦合，所以光信号首先进入空气后再进入光纤，在空气中需要对信号进行空间FFT变换-Angular spectrum
Platform: |
Size: 1024 |
Author: maya |
Hits:
Description: 角谱--VCSEL发出的光，经过透镜耦合进入光纤，仿真给出光由VCSEL进过透镜进入光纤的过程-Angular spectrum
Platform: |
Size: 1024 |
Author: maya |
Hits:
Description: 用菲涅尔衍射以及夫琅禾费衍射中的傅里叶变换，来模拟表面带有二维结构的VCSEL的出射光的传播。所依据的公式比较复杂，要想看懂建议参考：《傅里叶光学导论》 -古德曼（Goodman）-Simulation of wave propagation of a 2-D micro-structure in the surface of a VCSEL
using Fourier Transformation in the Fresnel and Fraunhofer diffraction.
Platform: |
Size: 2048 |
Author: zhong |
Hits:
Description: 本文件模拟的是普通结构的VCSEL的纵向电场分布以及器件的纵向折射率分布。参数可调，带有注解。-this m file is the calculation of the contribution of the longitudinal electrical field and the longitudinal refractive index. The parameters can be modified and are noted.
Platform: |
Size: 1024 |
Author: zhong |
Hits:
Description: This study is an attempt to investigate the
effect of distributed Bragg reflectors (DBRs) doping
concentration on the GaN-based vertical cavity surface
emitting lasers (VCSEL) using Integrated System
Engineering Technical Computer Aided Design (ISE
TCAD) software. Uniformly n (Up) and p (Down)
doping concentration, changed ranging 5e+17 to
1e+19 cm-3. The observation revealed that as DBR
doping concentrations rose, the output power increased
and the threshold current reduced. These are attributed
to the increase in radiative recombination and decrease
in the optical losses which has induced the
scattering process.-This study is an attempt to investigate the
effect of distributed Bragg reflectors (DBRs) doping
concentration on the GaN-based vertical cavity surface
emitting lasers (VCSEL) using Integrated System
Engineering Technical Computer Aided Design (ISE
TCAD) software. Uniformly n (Up) and p (Down)
doping concentration, changed ranging 5e+17 to
1e+19 cm-3. The observation revealed that as DBR
doping concentrations rose, the output power increased
and the threshold current reduced. These are attributed
to the increase in radiative recombination and decrease
in the optical losses which has induced the
scattering process.
Platform: |
Size: 569344 |
Author: wail |
Hits:
Description: vertical-cavity surface-emitting laser (semiconductor laser device, diode laser)
Telecomunications, Pumping source
Wave length : infrared to visible
etched mesa VCSEL 980nm
Buried tunnel junction(BTJ) VCSEL 1300nm,1550nm
Material:
ALGaAs(GaAs),InGaAsP(InP)
Simulators are needed to explore the design parameter for an optimum solution—low cost and short time for a design cycle
-vertical-cavity surface-emitting laser (semiconductor laser device, diode laser)
Telecomunications, Pumping source
Wave length : infrared to visible
etched mesa VCSEL 980nm
Buried tunnel junction(BTJ) VCSEL 1300nm,1550nm
Material:
ALGaAs(GaAs),InGaAsP(InP)
Simulators are needed to explore the design parameter for an optimum solution—low cost and short time for a design cycle
Platform: |
Size: 742400 |
Author: wail |
Hits:
Description: We review recent results on high-power, high-efficiency two-dimensional vertical-cavity surface-emitting laser
(VCSEL) arrays emitting around 980nm. Selectively oxidized, bottom-emitting single VCSEL emitters with 51 power
conversion efficiency were developed as the basic building block of these arrays. More than 230W of continuous-wave
(CW) power is demonstrated a ~5mm x 5mm array chip. In quasi-CW mode, smaller array chips exhibit 100W
output power, corresponding to more than 3.5kW/cm2 of power density.-We review recent results on high-power, high-efficiency two-dimensional vertical-cavity surface-emitting laser
(VCSEL) arrays emitting around 980nm. Selectively oxidized, bottom-emitting single VCSEL emitters with 51 power
conversion efficiency were developed as the basic building block of these arrays. More than 230W of continuous-wave
(CW) power is demonstrated a ~5mm x 5mm array chip. In quasi-CW mode, smaller array chips exhibit 100W
output power, corresponding to more than 3.5kW/cm2 of power density.
Platform: |
Size: 586752 |
Author: wail |
Hits:
Description: VCSEL激光器程序，高速传输性能，精细可以使用。经过验证(VCSEL laser program, high-speed transmission performance, fine, can be used. Verified)
Platform: |
Size: 1024 |
Author: Robin1111
|
Hits:
Description: 研究了VCSEL的饱和效应对激光器的慢光延时的影响，推导出相位和延时的关系。(The influence of saturation effect of VCSEL on the slow light delay of laser is studied, and the relation between phase and delay is deduced.)
Platform: |
Size: 873472 |
Author: maya_gh
|
Hits:
Description: 全国研究生数学建模A题vcsel激光器建模源码，仅供参考(National graduate student mathematical modeling A VCSEL laser modeling source, for reference only)
Platform: |
Size: 1024 |
Author: giuhou
|
Hits: