Description: for the first time, the impact of hotcarrier-induced gate capacitance variation on dynamic circuits
in a VLSI chip. To investigate the mismatch drift due to the
hot-carrier-induced gate capacitance variation, internal probing
was performed at room temperature using an electron-beam
prober before and after stre
To Search:
File list (Check if you may need any files):
2\01266626.pdf
.\01525138.pdf
.\04374135.pdf
.\04480153.pdf
.\04749312.pdf
.\05067047.pdf
.\05109519.pdf
.\05361327.pdf
.\06473869.pdf
.\06476051.pdf
.\06482203.pdf
.\06484218.pdf
.\06510478 (1).pdf
2
Download