Single power supply operation — Full voltage range: 2.7 to 3.6 volt read, erase, and program operations — Separate VCCQ for 5 volt I/O tolerance n Automated Program and Erase — Page program: 512+ 16 bytes — Block erase: 8 K+ 256 bytes n Block architecture — 8 Kbyte blocks+ 256 byte spare area (separately erasable, readable, and programmable) — 512 byte page+ 16 byte spare area for ECC and other system overhead information n Fast read and program performance (typical values) — Read: < 7 μs initial, < 50 ns sequential — Program: 200 μs (full page program at 400 ns/byte) — Erase: < 2 ms/8 Kbyte block n Pinout and package — Industry Standard NAND compatible pinout with 8-bit I/O bus and control signals — TSOP-II 44/40 pin package (standard and reverse) with copper lead frame for higher reliability — 40-ball FBGA package provides higher reliability

Flash接口制器 xilinx提供
........................\am30lv0064d.spc
........................\AM30LV0064D_22203.pdf
........................\amd_flash_denali.vhd
........................\amd_flash_tb.vhd
........................\k9f4008w0a.pdf
........................\k9f4008w0a.soma
........................\nand_interface.fit
........................\nand_interface.v
........................\pkg_convert.vhd
........................\README.txt
........................\samsung_flash_denali.vhd
........................\samsung_flash_tb.vhd
........................\time_sim.vhd
........................\wave.do

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