Finding and replacing the defective IGBT module timely by monitoring the ageing state of insulated gate bipolar transistor (IGBT) can improve the reliability of power converter and reduce the loss caused by IGBT failure. A method for detecting the condition of bond wires in IGBT module by identifying the short-circuit current of IGBT module is presented in this paper. It is based on the fact that parasitic parameters of IGBT module are affected by the local da

Filename	Size	Update
多热源\04123526.pdf	2803019	2016-05-08
多热源\0The Impact of Electro-Thermal Coupling on HBT Power Amplifiers.pdf	1702842	2016-05-08
多热源\Electro-Thermal Coupling Finite Element .pdf	433767	2016-05-08
多热源\Influence of thermal cross-couplings on power cycling lifetime of .pdf	679925	2016-05-08
多热源\Investigation Into IGBT During Turn-Off.pdf	1279802	2016-05-11
多热源\Junction Temperature Elevation as a Result of Thermal Cross Coupling.pdf	6761895	2016-05-08
多热源\Numerical Analysis of Stator-Rotor Coupled Transient Thermal .pdf	479822	2016-05-08
多热源\On-line Junction Temperature Measurement of IGBTs based.pdf	317065	2016-05-09
多热源\Practical chip-centric electro-thermal simulations .pdf	637449	2016-05-08
多热源\Prediction of device temperatures in an electric vehicle battery charger .pdf	687721	2016-05-08
多热源\Real-Time Prediction of Power Electronic Device.pdf	1362942	2016-05-08
多热源\Thermal Rating of a Submerged Substation.pdf	1672792	2016-05-08
多热源	0	2017-01-30

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