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Description: The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Pro- prietary HVIC and latch immune CMOS technologies enable rugge- dized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
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Size: 178317 |
Author: 5821594 |
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Description: 介绍MOSFET的结构、工作原理、静态、动态特性,并对动态特性的改进进行了论述,简介了MOSFET的驱动电路及其发展动态。-Introduction MOSFET structure, working principle, static and dynamic characteristics, and improve the dynamic characteristics are discussed, briefed MOSFET driver circuit and its developments.
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Size: 275456 |
Author: 朱刚强 |
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Description: 功率MOSFET知识介绍.pdf
功率MOSFET知识介绍.pdf-Power MOSFET introduce knowledge. Pdf power MOSFET introduce knowledge. Pdf
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Size: 840704 |
Author: 凌峰 |
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Description: These N-Channel enhancement mode field effect transistors
are produced using Fairchild s proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
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Size: 74752 |
Author: iojan |
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Description: 北京大学信息科学技术学院通信电路实验讲义:通信电路实验内容包括幅度调制与解调、频率调制与解调、HDB3编解码、2FSK信
号的调制与解调、高频谐振功率放大器或MOSFET高频功率放大器、收发信机主要性能
指标的测试(演示性)等六个实验。-Information Science and Technology, Peking University School of Communication circuit experiment notes: experimental communications circuit includes amplitude modulation and demodulation, frequency modulation and demodulation, HDB3 codec, 2FSK signal modulation and demodulation, resonant high-frequency power amplifiers or high-frequency power MOSFET amplifier, transceiver performance indicators test (demonstration) of six experiments.
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Size: 4258816 |
Author: yanghq |
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Description: The Bipolar Power Transistor (BPT), as a switching device for power applications, had a few disadvantages.
This led to the development of the power MOSFET (Metal Oxide Semiconductor Field
Effect Transistor). The power MOSFET is used in many applications such as SMPS (Switched
Mode Power Supplies), computer peripherals, automotive, and motor control. Continuous research
and improvement have provided it with ideal characteristics for replacing the BJT (Bipolar Junction
Transistor).This application note is a general description of power MOSFETs and a detailed presentation
of items from FSC’s data book specifications.
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Size: 325632 |
Author: Theodore |
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Description: 600v6a The UTC 8N60 is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switchi
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Size: 153600 |
Author: wangyong |
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Description: MOSFET器件设计高阶指导,教你如何设计一个优秀的电路-Power MOSFET Basic
• What is VDMOS?
• Important “ Figures of Merit”
• Design and Process
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Size: 1170432 |
Author: shark |
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Description: POWER MOSFET SWITCHING LOSS CALCULATE
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Size: 65536 |
Author: astray |
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Description: The combination of the LM4651 driver IC and the LM4652
power MOSFET Class D power amplifier IC provides a high
efficiency amplifier solution, suitable for self-powered speakers,
subwoofers and quality car boosters
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Size: 88064 |
Author: Mario Marcos |
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Description: Description
The UC3842/UC3843/UC3844/UC3845 are fixed
frequencycurrent-mode PWM controller. They are specially
designed for Off-Line and DC to DC converter applications
with minimum external components. These integrated
circuits feature a trimmed oscillator for precise duty cycle
control, a temperature compensated reference, high gain
error amplifier, current sensing comparator and a high
current totempole output for driving a Power MOSFET. The
UC3842 and UC3844 have UVLO thresholds of 16V (on)
and 10V (off). The UC3843 and UC3845 are 8.5V(on) and
7.9V (off). The UC3842 and UC3843 can operate within
100 duty cycle. The UC3844 and UC3845 can operate
with 50 duty cycle.-Description
The UC3842/UC3843/UC3844/UC3845 are fixed
frequencycurrent-mode PWM controller. They are specially
designed for Off-Line and DC to DC converter applications
with minimum external components. These integrated
circuits feature a trimmed oscillator for precise duty cycle
control, a temperature compensated reference, high gain
error amplifier, current sensing comparator and a high
current totempole output for driving a Power MOSFET. The
UC3842 and UC3844 have UVLO thresholds of 16V (on)
and 10V (off). The UC3843 and UC3845 are 8.5V(on) and
7.9V (off). The UC3842 and UC3843 can operate within
100 duty cycle. The UC3844 and UC3845 can operate
with 50 duty cycle.
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Size: 184320 |
Author: shen |
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Description: mosfet工作原理,详细讲解功率场效应管得工作原理及实际应用中的注意事项-This article descriptes how mosfet works,especially telles the features of power mosfet and some matters needs attention in practical.
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Size: 86016 |
Author: hs |
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Description: This board is an auxiliary power supply based on the VIPer12AS monolithic device with rather low output power required. It is a buck (step-down) converter with a positive output voltage referenced to the common ground based on the monolithic device VIPer12AS, which is a device that incorporates the PWM controller together with the vertical Power MOSFET switch in a SO-8 package
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Size: 1505280 |
Author: naserturk |
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Description: MOSFET_设计选型指导、Introduction to Power MOSFETs and their Applications 、MOSFET Basics、MOSFET电路符号、MOSFET选型、电力(功率)MOSFET 的正栅压反向输出特性、功率MOSFET入门等-Power Mosfet
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Size: 1291264 |
Author: 刘松 |
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Description: chip,The MAX5922A/B/C is a single-port network power controller
with an integrated power MOSFET, operating from
a +32V to +60V supply rail. The device is specifically
designed for power-sourcing equipment (PSE) in powerover-
LAN applications and is fully compliant to the IEEE
802.3af standard. The MAX5922 provides power devices
(PD) discovery, classification, current limit, and other necessary
functions for an IEEE 802.3af compliant PSE.-max chip
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Size: 315392 |
Author: franklin |
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Description: Power amplifier with MOSFET 100W
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Size: 78848 |
Author: lemp9002 |
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Description: The MP2359 is a monolithic step-down switch
mode converter with a built-in power MOSFET.
It achieves 1.2A peak output current over a
wide input supply range with excellent load and
line regulation. Current mode operation
provides fast transient response and eases loop
stabilization. Fault condition protection includes
cycle-by-cycle current limiting and thermal
shutdown.
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Size: 370688 |
Author: jobo |
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Description: 该芯片是用于H桥电路,通过变化的占空比对电机进行控制。-The IR2103(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels.
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Size: 113664 |
Author: 熊轩灏 |
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Description: IR的HEXFET功率场效应管IRF1010采用先进的工艺技术制造,具有极低的导通阻抗。-IR HEXFET Power MOSFET IRF1010 manufactured using advanced technology, with very low on-resistance.
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Size: 378880 |
Author: 熊轩灏 |
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Description: 该文档为功率MOSFET寄生电容劣化对开关瞬态响应的影响(This document is the effect of power MOSFET parasitic capacitance degradation on the transient response of switches.)
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Size: 414720 |
Author: liuleideyu |
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