Description: These N-Channel enhancement mode field effect transistors
are produced using Fairchild s proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
- [mosfet] - The theory behind Field Effect Transisto
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2N7000.pdf
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