Description: Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read, erase, and
program operations
— Separate VCCQ for 5 volt I/O tolerance
n Automated Program and Erase
— Page program: 512+ 16 bytes
— Block erase: 8 K+ 256 bytes
n Block architecture
— 8 Kbyte blocks+ 256 byte spare area
(separately erasable, readable, and programmable)
— 512 byte page+ 16 byte spare area for ECC and other
system overhead information
n Fast read and program performance (typical values)
— Read: < 7 μs initial, < 50 ns sequential
— Program: 200 μs (full page program at 400 ns/byte)
— Erase: < 2 ms/8 Kbyte block
n Pinout and package
— Industry Standard NAND compatible pinout with 8-bit
I/O bus and control signals
— TSOP-II 44/40 pin package (standard and reverse)
with copper lead frame for higher reliability
— 40-ball FBGA package provides higher reliability
File list (Check if you may need any files):
Flash接口制器 xilinx提供
........................\am30lv0064d.spc
........................\AM30LV0064D_22203.pdf
........................\amd_flash_denali.vhd
........................\amd_flash_tb.vhd
........................\k9f4008w0a.pdf
........................\k9f4008w0a.soma
........................\nand_interface.fit
........................\nand_interface.v
........................\pkg_convert.vhd
........................\README.txt
........................\samsung_flash_denali.vhd
........................\samsung_flash_tb.vhd
........................\time_sim.vhd
........................\wave.do
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