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Description: ecc 算法实现和纠错
1。nand_trans_result函数是实现ecc的行校验
2。nand_calculate_ecc函数是实现ecc的列校验
3。nand_correct_data函数实现1bit纠错-ecc algorithm and error-correcting one. nand_trans_result function is to achieve parity 2 rows ecc. ecc realize nand_calculate_ecc function is checking out the 3. 1bit error correction function nand_correct_data realize
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Size: 1024 |
Author: czhwin99 |
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Description: Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read, erase, and
program operations
— Separate VCCQ for 5 volt I/O tolerance
n Automated Program and Erase
— Page program: 512 + 16 bytes
— Block erase: 8 K + 256 bytes
n Block architecture
— 8 Kbyte blocks + 256 byte spare area
(separately erasable, readable, and programmable)
— 512 byte page + 16 byte spare area for ECC and other
system overhead information
n Fast read and program performance (typical values)
— Read: < 7 μs initial, < 50 ns sequential
— Program: 200 μs (full page program at 400 ns/byte)
— Erase: < 2 ms/8 Kbyte block
n Pinout and package
— Industry Standard NAND compatible pinout with 8-bit
I/O bus and control signals
— TSOP-II 44/40 pin package (standard and reverse)
with copper lead frame for higher reliability
— 40-ball FBGA package provides higher reliability-Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read, erase, and
program operations
— Separate VCCQ for 5 volt I/O tolerance
n Automated Program and Erase
— Page program: 512+ 16 bytes
— Block erase: 8 K+ 256 bytes
n Block architecture
— 8 Kbyte blocks+ 256 byte spare area
(separately erasable, readable, and programmable)
— 512 byte page+ 16 byte spare area for ECC and other
system overhead information
n Fast read and program performance (typical values)
— Read: < 7 μs initial, < 50 ns sequential
— Program: 200 μs (full page program at 400 ns/byte)
— Erase: < 2 ms/8 Kbyte block
n Pinout and package
— Industry Standard NAND compatible pinout with 8-bit
I/O bus and control signals
— TSOP-II 44/40 pin package (standard and reverse)
with copper lead frame for higher reliability
— 40-ball FBGA package provides higher reliability
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Size: 847872 |
Author: enyou |
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Description: Componentes extras para o quickreport
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Size: 33792 |
Author: Ricardo |
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Description: 一、 概况
1. NAND 闪存的种类
2. NAND 闪存的框架
3. 非全页的编程（Partial Page Programming）
4. 从NAND 启动（Booting From NAND）
二、 NAND 闪存的可靠性问题
1. 坏块管理（Bad Block Management，BBM)
2. 坏块管理算法的规范 （BBM Algorithm Specification）
3. 6 个工厂编程的坏块管理的要素（Six BBM Factory Programming Elements）
1) 坏块的替换策略（Bad Block Replacement Strategy，BBR）
2) 分区（Partitioning）
3) 纠错码（Error Correction Codes ，ECC )
4) 备用区的使用（Spare Area Placement，SAP）
5) 未用好块的格式（Free Good Block Formatting）
6) 动态元数据（Dynamic Metadata）
4. 系统举例
5. 通用的工厂编程坏块管理方案（Universal Factory Programming BBM Scheme）
6. 第三方和客制化的坏块管理方案（Third-party and Custom BBM Schemes）
三、 对Managed NAND 编程（Programming Managed NAND）
四、 NAND 的序列号（Serializing NAND）
五、 结论-I. Overview
1. NAND type flash memory
2. NAND flash memory framework
3. Non-full-page programming (Partial Page Programming)
4. From the NAND boot (Booting From NAND)
Second, NAND flash memory reliability problems
1. Bad block management (Bad Block Management, BBM)
2. Bad block management algorithm specification (BBM Algorithm Specification)
3.6 factory-programmed elements of bad block management (Six BBM Factory Programming Elements)
1) bad block replacement policy (Bad Block Replacement Strategy, BBR)
2) partition (Partitioning)
3) error-correcting code (Error Correction Codes, ECC)
4) the use of spare area (Spare Area Placement, SAP)
5) the format is not good use of the block (Free Good Block Formatting)
6) The dynamic metadata (Dynamic Metadata)
4. System Example
5. GM s factory-programmed bad block management program (Universal Factory Programming BBM Scheme)
6. Third-party and custom bad block management program (Third-party and Custom BB
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Size: 2125824 |
Author: livimi |
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Description: NAND Flash的读写擦除
S5PV210的NAND Flash控制器有如下特点：
1) 支持512byte,2k,4k,8k的页大小
2) 通过各种软件模式来进行NAND Flash的读写擦除等
3) 8bit的总线
4) 支持SLC和MCL的NAND Flash
5) 支持1/4/8/12/16bit的ECC
6) 支持以字节/半字/字为单位访问数据/ECC寄存器，以字为单位访问其他寄存器。
注意：在此使用的Mini210S的NAND Flash类型为SLC，大小为1G，型号为K9K8G08U0A。所以本章的内容是针对SLC类型的NAND Flash(包括256M/512M/1GB等)，并不适用MLC类型的NAND Flash。-NAND Flash read and write erase S5PV210 NAND Flash controller has the following characteristics: 1) Support 512byte, 2k, 4k, 8K page size 2) through a variety of software for NAND Flash read and write erase 3) 8-bit Bus 4) support SLC and MCL NAND Flash 5) support 1/4/8/12/16bit ECC 6) support to the byte/halfword/word unit to access the data/ECC register, in word units to access other register. Note: the use Mini210S in this type of NAND Flash SLC size for 1G, model K9K8G08U0A. Therefore, this chapter is the type SLC NAND Flash (including 256M/512M/1GB), does not apply to the MLC type NAND Flash.
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Size: 26624 |
Author: 王瑞 |
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Description: 已知椭圆曲线E23（16,10）： y 2 ≡ x3 +16x +10mod23和它上的一个点G=（5,10），
计算G 的所有倍点。相当于用C语言编程实现了该题-Known elliptic curve E23 (16,10): y 2 ≡ x3+ 16x+ 10mod23 and a point G on it = (5,10), All times the point G is calculated. Equivalent to using the C programming language implements this title
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Size: 172032 |
Author: |
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Description: % 此函数由初始轨道的位置和速度矢量轨道参数
%
%参考资料:
% Howard D.Curtis 《Obital Mechanics for Engineering Students》
% P158-164 4.4 Orbital elements and the state vector
% 参考代码：P606-608 D.8 coe_from_sv.m
%常量：
% mu - 地球引力常数 (398600.5 km^3/s^2)
% Re - 地球半径 (6378.13655km)
%
%
%输入：
% R0 - 初始位置矢量
% V0 - 初始速度矢量
%输出：
% coe - 输出的轨道要素 [h_p ecc Omiga i w f]
% 其中
% h_p - 轨道近地点高度 (km)
% ecc - 偏心率
% Omiga - 升交点赤经(°)
% i - 轨道倾角(°)
% w - 近地点幅角(°)
% f - 真近点角(This function convert orbit position and velocity vector to 6 orbit parameter)
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Size: 1024 |
Author: unpiorge
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